Semiconductor Vertical Quantum Structures Self-Formed in Inverted Pyramids

نویسنده

  • Qing ZHU
چکیده

vii

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Synthesis of the Silicon Inverted Nano- Pyramid and Study of Their Self- Cleaning Behavior

In this paper, synthesis of inverted nano-pyramids on a single crystal silicon surface through a simple and cost-effective wet chemical method is surveyed. These structures were synthesized by MACE process using Cu as the assisted metal in the solution of copper nitrate, hydrogen peroxide and hydrofluoric acid for different etching times. FE-SEM images of the samples show that time is an import...

متن کامل

Abstract for an Invited Paper for the MAR05 Meeting of The American Physical Society Unified description of the formation and evolution of self-organized quantum dots in the InAs/GaAs(001) and Ge/Si(001) systems

for an Invited Paper for the MAR05 Meeting of The American Physical Society Unified description of the formation and evolution of self-organized quantum dots in the InAs/GaAs(001) and Ge/Si(001) systems GIOVANNI COSTANTINI, Max-Planck-Institut fuer Festkoerperforschung Self-organised semiconductor quantum dots, epitaxially grown on lattice-mismatched substrates, are promising candidates for the...

متن کامل

A transmission electron microscopy study of defects formed through the capping layer of self-assembled InAs/GaAs quantum dot samples

Plan-view and cross-sectional transmission electron microscopy have been used for a detailed study of the defects formed in capped InAs/GaAs quantum dot QD samples. Three main types of defects, V-shaped defects, single stacking faults, and stacking fault pyramids, were found to form under growth conditions that led to either very large, indium enriched, or coalesced islands. All three types of ...

متن کامل

Self-assembling and self-ordering of Ge islands on vicinal Si(001) surfaces

Fabrication of semiconductor quantum dot structures with a regular in-plane spatial distribution and optimum size uniformity is highly desirable for applications of their novel optical and electronic properties. This remains a challenging subject, especially on the nanometer scale. The strain-driven self-assembled formation of Ge islands on Si during molecular beam epitaxy (MBE) in the Stranski...

متن کامل

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use self-organized three-dimensional (3D) structures, such as 3D coherent islands, which ar...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2008